jvt j , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MCR201 (silicon) thru mcr206 g signal thyristors . . . annular pnpn devices designed for industrial/military applica- tions such as relay and lamp drivers, small motor controllers and drivers for larger thyristors, and in sensing and detection circuits. sensitive gate trigger current ? 200 ua maximum low reverse and forward blocking current - 100 na maximum, tc - 125c low holding current ? 5.0 ma maximum passivated surface for reliability and uniformity to 18 metal package maximum ratings rating peak reverse blocking voltage MCR201 mcr202 mcr203 mcr204 mcr2o5 mcr206 forwerd current rms (see figures 4 & 5) (all conduction angles) peak forwerd surge current, ta m 25c (1/2 cycle. sine wave, 60 hz) circuit fusing considerations. ta * 2sc it- 1.0 to 8.3ms) peek gate power - forwerd. ta - 26c average gate power - forwerd, ta - 25c peak gate current - forward, ta - 25c (300 (is, 120pps) peak gate voltage - reverie operating junction temperature range 9 reted vrrmandvdrm(d storage temperature renge thermal characteristics chareenrietie thermal resistance, junction to ceae tnerme retistance, junction to ambient symbol vrrm 't(hms) 'tsm .2, pgm pgf(av) 'gfm vgrm tj tst? symbol sjc ?ja value is 30 60 100 iso 200 o.s 6.0 0.15 0.1 0.01 1.0 4.0 -65to*mo -65 to "150 max iso 400 unit volts amp amp a* wen watt amp volts c c unit c/w c/w silicon controlled rectifiers 0.6 ampere rms 15 thru 200 volts / _ seating / plane style 6: pin 1. cathode ?\. gate - 3. anode . (v a? 4 r~j |li if i?d 1tnn miuih ehb a 5 31 5.84 b , .52 4.95 c .32 5.33 ..._.. _j- j yj e - 0.762 f 0.406 0.483 8 2.64 bc h 0.914 1.17 j 0.711 1.22 * i2^_ - m 45 bsc n 1.27 bsc f - ] 1.27 ! ini hs ojob 0^30 0.17s 0.19s 0.170 0.210 qjj16 0.021 ? 0 030 0.016 0.019 0.10 bsc 0.036 0.046 teb2i 0.04b o.soo 45 bsc n.kfl fisr - 10.050 all jedec notes snd dinwmioni apply. (to-w) empereture devices avelletrie - consult fectery. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
MCR201 thru mcr206 (continued) electrical characteristics (rqk " 1000 ohms) chirac mr ittic peak forwird blocking voltage (now 1) MCR201 mcr202 mcr203 mcr204 mcr2o5 mcr206 peek forward blocking current (rated vdrm 9 tc - 110c) ?eek reverse blocking current (rated vf,?m ? tc ? 1 10c) forward "on" voltage (note 2) htm ? so" "?* p??k ? ta ? 2?c) gate trigger current (continuous del (note 3) tc - 25c (anode voltage ? 7.0 vdc, rl - 100 ohmj) tc - -65c gate trigger voltage (continuous dc) tc - 25c (anode voltage - 7.0 vdc, rl - looohnu) tc = -65c (anode voltlot - rind vdrm) tc ' ' 10c holding current tc - 25c (anode voltage -7.0 vdc, initiating current ? 20 ma) tc - -65c symbol vorm iorm 'rrm vtm 'gt vgt vgd ih min 15 30 60 100 150 200 ? " ? ~ 0.1 : max _ 100 1.5 1.7 200 350 0.8 1.2 5.0 10 unit volt! i'a tia voitt ma volts ma 1. rating* apply for zaro or nagatrv* gata voltaga but potitiva gate voltaga shall not ba appliad concurrantly with a nvgitiva potantial on the anode. whan checking forward or ravana blocking capability, thyristor davicas ihould not ba tastad with a constant currant sourca in a mannar that tha voltaga appliad axcaads tha ratad blocking voltaga. 2. forward currant appliad for 1.0 ms maximum duration, duty cycla?l.0%. 3. rgk currant is not included in measurement. figure 1 - surge ratings ??| |?i cycle' ta " 25c "?s 1.0 2.0 3.0 s.o 7j> 10 20 3d so 70 100 number of cycles at 60 ht 0.8 si ii > p o. figure 2 - power dissipation conduction angle 3s z2 so 30 0.1 t.i 0.3 0.4 ifiav), average forward current (amp)
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